N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications.
Features:
• ’Trench’ technology• Very low on-state resistance• Fast switching• Stable off-state characteristics• High thermal cycling performance• Low thermal resistance
(Absolute) Maximum Ratings:
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDSS VDGR VGS ID IDM Ptot Tj, Tstg
Drain-source voltage Drain-gate voltage Gate-source voltage
Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature